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Description
Tyoe of wafer | Side length a(mm) | Side length h(mm) | |
Monocrystalline wafer | 125.0±0.5 | 150.0±1.0 | |
125.0±0.5 | 165.0±1.0 | ||
156.0±0.5 | 200.0±1.0 | ||
Monocrystalline Wafer Technical Characteristic | |||
Ltem | Parameter Requirements | Parameter Requirements | Parameter Requirements |
Diameter | 125*125mm±0.5mm | 125*125mm±0.5mm | 156*156mm±0.5mm |
Orientation | 150mm | 165mm | 200mm |
Orientierung | <100>±3° | <100>±3° | <100>±3° |
Resistivity | 0.5—3.0Ω.com | 0.5—3.0Ω.com | 0.5—3.0Ω.com |
Minority carrier lifetime | >2.0us | >2.0us | >2.0us |
Radial resistance change | <25﹪ | <25﹪ | <25﹪ |
Oxygen content | ≤1.0*1018at/cm3 | ≤1.0*1018at/cm3 | ≤1.0*1018at/cm3 |
Carbon content | ≤5.0*1016at/cm3 | ≤5.0*1016at/cm3 | ≤5.0*1016at/cm3 |
TTV | ≤35μm | ≤35μm | ≤35μm |
Thickness | 200±20μm | 200±20μm | 200±20μm |
Edge chip | ≤2mm | ≤2mm | ≤2mm |
Saw mark | 15μm | 15μm | 15μm |
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Monocrystalline Wafer
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